BSM10GD120DN2

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price: Negotiable
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Delivery term: The date of payment from buyers deliver within days
seat: Guangdong
Validity to: Long-term effective
Last update: 2017-07-06 18:28
Browse the number: 443
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· Part Number: BSM10GD120DN2

· Category: IGBT Module

· Manufacturer: EUPEC

· Packaging: IGBT module

· Data Code: 2015+

· Qty Available: 214

· Description: 6IGBT: 10A1200V;IGBT Modules 1200V 10A FL BRIDGE

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Continuous Collector Current at 25 C: 15 A
Gate-Emitter Leakage Current: 120 nA
Pd - Power Dissipation: 80 W
Package / Case: EconoPACK 2
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10


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